N channel：VDS =60V,ID =15A RDS(ON) <70mΩ @ VGS=10V RDS(ON) <80mΩ @ VGS=4.5V
p channel ：VDS =-60V,ID =-15A RDS(ON) <65mΩ @ VGS=-10V RDS(ON) <85mΩ @ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
N channel VDS =-60V,ID =-20A RDS(ON) <23mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
p channel VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
N channel VDS =-60V,ID =-20A RDS(ON) <23mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
p channel VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
N channel ：VDS=60V,ID=20A RDS(ON)<28mΩ @ VGS=10V RDS(ON)<32mΩ @ VGS=4.5V
p channel ：VDS=-60V,ID=-16A RDS(ON)<60mΩ @ VGS=-10V RDS(ON)<72mΩ @ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
N channel ：VDS=60V,ID=20A RDS(ON)<28mΩ @ VGS=10V RDS(ON)<32mΩ @ VGS=4.5V
p channel ：VDS=-60V,ID=-16A RDS(ON)<60mΩ @ VGS=-10V RDS(ON)<72mΩ @ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
N channel VDS =-60V,ID =-40A RDS(ON) <15.5mΩ @ VGS=-10V RDS(ON) <22mΩ @ VGS=-4.5V
p channel VDS =-60V,ID =-35A RDS(ON) <35mΩ @ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
N channel VDS =-60V,ID =-40A RDS(ON) <15.5mΩ @ VGS=-10V RDS(ON) <22mΩ @ VGS=-4.5V
p channel VDS =-60V,ID =-35A RDS(ON) <35mΩ @ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
