NCE60NP2012K

General Features

N channel

  • VDS =-60V,ID =-20A RDS(ON) <23mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V

p channel

  • VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.5V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability

Application

  • H-bridge
  • Inverters
NCE60NP2012K

The NCE60NP2012K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Products

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