N channel VDS=60V,ID=5A RDS(ON)<28mΩ @ VGS=10V RDS(ON)<38mΩ @ VGS=4.5V
P channel VDS=-60V,ID=-4A RDS(ON)<80mΩ @ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
100% Rg tested
100% ΔVds tested
N channel VDS=60V,ID=5A RDS(ON)<28mΩ @ VGS=10V RDS(ON)<38mΩ @ VGS=4.5V
P channel VDS=-60V,ID=-4A RDS(ON)<80mΩ @ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
100% Rg tested
100% ΔVds tested
