NCE603S

General Features

N channel

  • VDS=60V,ID=5A RDS(ON)<28mΩ @ VGS=10V RDS(ON)<38mΩ @ VGS=4.5V

P channel

  • VDS=-60V,ID=-4A RDS(ON)<80mΩ @ VGS=-10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • 100% Rg tested
  • 100% ΔVds tested

Application

  • H-bridge
  • Inverters
NCE603S_扫描版

The NCE603S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Products

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