N-channel VDS= 40 V,ID= 28 A RDS(ON)< 16.5 mΩ @VGS=10V (typical: 14 mΩ)RDS(ON)< 22 mΩ @VGS=4.5V (typical: 18 mΩ)
P-channel VDS= -40 V,ID= -15 A RDS(ON)< 24 mΩ @VGS=-10V (typical: 20.8 mΩ) RDS(ON)< 37 mΩ @VGS=-4.5V (typical: 30.3 mΩ)
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
100% UIS tested
100% ΔVds tested
N-channel VDS= 40 V,ID= 28 A RDS(ON)< 16.5 mΩ @VGS=10V (typical: 14 mΩ)RDS(ON)< 22 mΩ @VGS=4.5V (typical: 18 mΩ)
P-channel VDS= -40 V,ID= -15 A RDS(ON)< 24 mΩ @VGS=-10V (typical: 20.8 mΩ) RDS(ON)< 37 mΩ @VGS=-4.5V (typical: 30.3 mΩ)
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
100% UIS tested
100% ΔVds tested
