NCE40NP2815G

N-channel

  • VDS= 40 V,ID= 28 A RDS(ON)< 16.5 mΩ @VGS=10V (typical: 14 mΩ)RDS(ON)< 22 mΩ @VGS=4.5V (typical: 18 mΩ)

P-channel

  • VDS= -40 V,ID= -15 A RDS(ON)< 24 mΩ @VGS=-10V (typical: 20.8 mΩ) RDS(ON)< 37 mΩ @VGS=-4.5V (typical: 30.3 mΩ)
  • High density cell design for ultra low RDS(ON)
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation
  • 100% UIS tested
  • 100% ΔVds tested

Application

  • DC/DC converter
  • Power management
  • H-Bridge
  • Inverter

The NCE40NP2815G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.