NCE40NP2815G
N-channel
- VDS= 40 V,ID= 28 A RDS(ON)< 16.5 mΩ @VGS=10V (typical: 14 mΩ)RDS(ON)< 22 mΩ @VGS=4.5V (typical: 18 mΩ)
P-channel
- VDS= -40 V,ID= -15 A RDS(ON)< 24 mΩ @VGS=-10V (typical: 20.8 mΩ) RDS(ON)< 37 mΩ @VGS=-4.5V (typical: 30.3 mΩ)
- High density cell design for ultra low RDS(ON)
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- 100% UIS tested
- 100% ΔVds tested
Application
- DC/DC converter
- Power management
- H-Bridge
- Inverter
The NCE40NP2815G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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