Q1 "High Side" MOSFET：VDS =30V,ID =25A RDS(ON) <8.1mΩ @ VGS=10V RDS(ON)<11mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET ：VDS =30V,ID =75A RDS(ON) <4.4mΩ @ VGS=10V RDS(ON) <5.6mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb free terminal plating
RoHS compliant
Halogen free
Q1 "High Side" MOSFET：VDS =30V,ID =25A RDS(ON) <8.1mΩ @ VGS=10V RDS(ON)<11mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET ：VDS =30V,ID =75A RDS(ON) <4.4mΩ @ VGS=10V RDS(ON) <5.6mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb free terminal plating
RoHS compliant
Halogen free
Q1 "High Side" MOSFET： VDS =30V,ID =30A RDS(ON) <5.8mΩ @ VGS=10V RDS(ON)<8.9mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET： VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V RDS(ON) <2.8mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb free terminal plating
RoHS compliant
Halogen free
Q1 "High Side" MOSFET： VDS =30V,ID =30A RDS(ON) <5.8mΩ @ VGS=10V RDS(ON)<8.9mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET： VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V RDS(ON) <2.8mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb free terminal plating
RoHS compliant
Halogen free
