Q1 "High Side" MOSFET：VDS= 30 V,ID= 20 A RDS(ON)< 7.2 mΩ @VGS=10V (typical: 6.1 mΩ) RDS(ON)< 12.5 mΩ @VGS=4.5V (typical: 9.6 mΩ)
Q2 "Low Side" MOSFET ：VDS= 30 V,ID= 35 A RDS(ON)< 4.1 mΩ @VGS=10V (typical: 3.5 mΩ) RDS(ON)< 7.8 mΩ @VGS=4.5V (typical: 5.9 mΩ)
Excellent gate charge x RDS(on)(FOM) Pb-free lead plating
Very low on-resistance RDS(on)
150°C operating temperature
100% UIS tested
Q1 "High Side" MOSFET：VDS= 30 V,ID= 20 A RDS(ON)< 7.2 mΩ @VGS=10V (typical: 6.1 mΩ) RDS(ON)< 12.5 mΩ @VGS=4.5V (typical: 9.6 mΩ)
Q2 "Low Side" MOSFET ：VDS= 30 V,ID= 35 A RDS(ON)< 4.1 mΩ @VGS=10V (typical: 3.5 mΩ) RDS(ON)< 7.8 mΩ @VGS=4.5V (typical: 5.9 mΩ)
Excellent gate charge x RDS(on)(FOM) Pb-free lead plating
Very low on-resistance RDS(on)
150°C operating temperature
100% UIS tested
Q1 "High Side" MOSFET：VDS=30V,ID=15A RDS(ON)<11.5mΩ @ VGS=10V RDS(ON)<19mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET：VDS=30V,ID=20A RDS(ON)<8.2mΩ @ VGS=10V RDS(ON)<13mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
Q1 "High Side" MOSFET：VDS=30V,ID=15A RDS(ON)<11.5mΩ @ VGS=10V RDS(ON)<19mΩ @ VGS=4.5V
Q2 "Low Side" MOSFET：VDS=30V,ID=20A RDS(ON)<8.2mΩ @ VGS=10V RDS(ON)<13mΩ @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
