Optimized body diode reverse recovery performance
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
Optimized body diode reverse recovery performance
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
Optimized body diode reverse recovery performance
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
N-Channel ：VDS = 30V,ID = 3.5A RDS(ON) <58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V
P-Channel： VDS = -30V,ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
N-Channel ：VDS = 30V,ID = 3.5A RDS(ON) <58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V
P-Channel： VDS = -30V,ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
