NCE609*

General Features

  • N-Channel

VDS = 40V,ID = 21A RDS(ON) <17mΩ @ VGS=10V RDS(ON) <29mΩ @ VGS=4.5V

  • P-Channel

VDS = 40V,ID = 14A RDS(ON) <32mΩ @ VGS=10V RDS(ON) <45mΩ @ VGS=4.5V

  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
NCE609

The NCE609 uses advanced trench technology to provide excellent R and low gate charge . The complementar DS(ON) y MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

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