NCEPB303GU

General Features

Q1 “High Side” MOSFET：

• VDS =30V,ID =30A RDS(ON) <5.8mΩ @ VGS=10V RDS(ON)<8.9mΩ @ VGS=4.5V

Q2 “Low Side” MOSFET：

• VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V RDS(ON) <2.8mΩ @ VGS=4.5V

• Excellent gate charge x RDS(on) product(FOM)

• Very low on-resistance RDS(on)

• 150 °C operating temperature

• Pb free terminal plating

• RoHS compliant

• Halogen free

Application

• Compact DC/DC converter applications