NCE60NP4035K

General Features

N channel

  • VDS =-60V,ID =-40A RDS(ON) <15.5mΩ @ VGS=-10V RDS(ON) <22mΩ @ VGS=-4.5V

p channel

  • VDS =-60V,ID =-35A RDS(ON) <35mΩ @ VGS=-10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability

Application

  • H-bridge
  • Inverters
NCE60NP4035K

The NCE60NP4035K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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