NCE4606

General Features

  • N-Channel 

VDs = 30V,ID =6.5A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 37mΩ@ VGS=4.5V

  • P-Channel

VDs = 30V,ID =7A RDS(ON) < 32mΩ @ VGS=10V RDS(ON) < 70mΩ@ VGS=4.5V

  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • MSL3 up to 260°C peak reflow
NCE4606

The NCE4606 uses advanced trench technology to provide excellent R and low gate charge . The complementar DS(ON) y MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

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